Boosting the efficiency of quantum dot–sensitized solar cells over 15% through light‐harvesting enhancement

Abstract How to improve the capacity of light‐harvesting is still an important point and essential strategy for assembling high‐efficiency quantum dot–sensitized solar cells (QDSCs). A believable approach implant new light absorption materials into QDSCs stimulate charge transfer. Herein, few‐layer black phosphorus dots (BPQDs) are synthesized by electrochemical intercalation technology using bulk BP as source. Then obtained BPQDs deposited onto surface Zn–Cu–In–S–Se (ZCISSe) QD‐sensitized TiO 2 substrate serve another material first time. The experimental results have shown that can not only increase intensity photoanode but also reduce unnecessary recombination processes at interface photoanode/electrolyte. Through optimizing size deposition process BPQDs, champion power conversion efficiency ZCISSe increased 15.66% (26.88 mA/cm , V oc = 0.816 V, fill factor [FF] 0.714) when compared with original value 14.11% ( J sc 25.41 0.779 FF 0.713).